JEOL JBX-5D2-U E-Beam Lithography System Specifications

• 14 year old Electron Beam Lithographer
  
• 50 KeV Electron Beam
  
• LaB 6 Current Source
  
• 2 MHz Pattern Generator
  
• Variable field size
  
• Low and high resolution modes
  
• 10mm working distance for high res mode
  
• No height map
  
• Current Range - 10 pA to 10 mA
  
• Beam Size ~ 10 nm for small current.
  
• 125 mm (5”) Stage Travel with l/120 Interferometer
  
• Best Resolution - 50 nm nested lines in 200 nm resist (Hank Smith et al.),
  70 nm nested lines in 150 nm resist (JPL).
  75 nm nested lines in 350 nm UV3
  
• Down to 30 nmin 150nmresist, problemswith repeatability.
  
• Pattern code fully accessible - custom modification

• 3-5” Si wafers
  
• SiN membranes
  
• 4-5” Quartz Masks

• Low Resolution Mode 100 mm working distance: - 800 microns
  
• High Resolution Mode 10 mm working distance: - 80 microns and smaller (small area only)

Resist dose requirements:

• UVseries ~30mC/cm 2
  
• Apex E ~ 12 mC/cm 2
  
• Sal-605 ~ 12 mC/cm 2
  
• PMMA ~ 600 mC/cm 2

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