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Electron Beam Lithography

Photo of the JEOL E-beam The electron beam microfabricator provides an exposure method for various research initiatives at the Center for NanoTechnology. It allows direct write of patterns in photoresist on silicon wafers for the purposes of testing resist sensitivity and characteristics or pattern generation for other purposes. It also provides a medium for patterning of optical and X-ray masks. In addition to providing unaffiliated users with access to an advanced lithography tool, the e-beam provides students with experience in advanced lithography tools.

JEOL JBX-5D2-U E-Beam Lithography System Specifications

Recent patterns written in UV3 by the JEOL JBX-5D2-U E-Beam Lithography System
click on the image to see a larger version.
Image of the 42 nanometer trench in UV3
Image of the 79 nanometer trench in UV3
Image of the 61 nanometer trench in UV3.

Useful Files for Current Users

In order to schedule time to use the e-beam you will need to register on MeetingMaker. If you are a new user you must contact Scott Dhuey for training and to obtain the password for MeetingMaker.

For more information on the e-beam, please contact: Scott Dhuey at the Center for Nanotechnology

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  last updated: May 15, 2005
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